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型号	功能描述	生产厂家企业	LOGO
P401WG	NEC P401WG Semi Professional Projector 文件：737.44 Kbytes Page：2 Pages	NEC 瑞萨	NEC
P401WG	NEC P401WG Semi Professional Projector	RENESAS 瑞萨	RENESAS
FL401	IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes) FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs	PANJIT 強茂	PANJIT
LR401	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res	POLYFET	POLYFET
CLC401	Fast Settling, Wideband High-Gain Monolithic Op Amp 文件：388.71 Kbytes Page：6 Pages	NSC 国半	NSC
CLC401AJE	Fast Settling, Wideband High-Gain Monolithic Op Amp 文件：388.71 Kbytes Page：6 Pages	NSC 国半	NSC
CLC401AJP	Fast Settling, Wideband High-Gain Monolithic Op Amp 文件：388.71 Kbytes Page：6 Pages	NSC 国半	NSC

P3A9606JKZ
P3A9606JKZ
2024-2-22
P4SMA10CA
P4SMA10CA
2023-5-15
P412W，P413，P413W，P414，P414W，P415，P415W，P421
P412W，P413，P413W，P414，P414W，P415，P415W，P421
2020-3-3
P540A，P540A01，P540A02，P540A04，P540C0101，P540C0102，
P540A，P540A01，P540A02，P540A04，P540C0101，P540C0102，
2020-3-2
P4010S
P4010S，全新原装当天发货或门市自取0755-82732291.
2019-9-15
P35-4304-000-200-模拟杂项
特点 ·宽带0.5 - 16GHz的 ·低插入损耗;4分贝的典型值在8GHz的 ·衰减0.5dB步进到31.5分贝 ·开关速度快 ·通过提高性能的砷化镓过孔 P35 -4304-000 -200是一种高性能砷化镓单片提供6位数字衰减器的衰减步长为0.5dB31.5分贝范围。它是适用于宽带通信，仪器仪表和电子战的使用应用。衰减器是免费0V/-5V或0/-8V信号控制线的应用程序来控制按照下面的真值表。通过修改控制线，实现全衰减范围组合。模具制造，使用建设部0.5mm栅极长度的MESFET制程（S20）。它是完全
2012-12-20