| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by | STMICROELECTRONICS 意法半导体 |   | ||
N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested | STMICROELECTRONICS 意法半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO |
16900 |
正规渠道,只有原装! |
|||
ST |
NEW |
TO-263 |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ST |
25+23+ |
TO263 |
13318 |
绝对原装正品全新进口深圳现货 |
|||
ST |
24+ |
原厂原封 |
6523 |
进口原装公司百分百现货可出样品 |
|||
ST/意法 |
23+ |
TO-263 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
ST |
25+ |
TO-263 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
1709+ |
TO-263/D2-PAK |
32500 |
普通 |
|||
ST |
24+ |
N/A |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
IR |
2447 |
SOT263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IR |
23+ |
SOT263 |
8000 |
只做原装现货 |
P3NC90Z芯片相关品牌
P3NC90Z规格书下载地址
P3NC90Z参数引脚图相关
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- P3937
P3NC90Z数据表相关新闻
P3A9606JKZ
P3A9606JKZ
2024-2-22P4SMA10CA
P4SMA10CA
2023-5-15P412W，P413，P413W，P414，P414W，P415，P415W，P421
P412W，P413，P413W，P414，P414W，P415，P415W，P421
2020-3-3P3403ACL全新原装现货
随时可发货
2019-9-17P4010S
P4010S，全新原装当天发货或门市自取0755-82732291.
2019-9-15P35-4304-000-200-模拟杂项
特点 ·宽带0.5 - 16GHz的 ·低插入损耗;4分贝的典型值在8GHz的 ·衰减0.5dB步进到31.5分贝 ·开关速度快 ·通过提高性能的砷化镓过孔 P35 -4304-000 -200是一种高性能砷化镓单片提供6位数字衰减器的衰减步长为0.5dB31.5分贝范围。它是适用于宽带通信，仪器仪表和电子战的使用应用。衰减器是免费0V/-5V或0/-8V信号控制线的应用程序来控制按照下面的真值表。通过修改控制线，实现全衰减范围组合。模具制造，使用建设部0.5mm栅极长度的MESFET制程（S20）。它是完全
2012-12-20
DdatasheetPDF页码索引
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