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P3NB80

N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

STMICROELECTRONICS

意法半导体

Power MOSFET

文件:1.28953 Mbytes Page:9 Pages

VBSEMI

微碧半导体

POWER MOSFET

GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as po

SUNTAC

N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

STMICROELECTRONICS

意法半导体

N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

STMICROELECTRONICS

意法半导体

Power MOSFET

文件:2.12073 Mbytes Page:9 Pages

VBSEMI

微碧半导体

更新时间:2026-7-24 10:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
24+
1
自己现货
SST
原厂封装
9800
原装进口公司现货假一赔百
ST
25+
TO-220
20000
原装,请咨询
ST
2511
TO-220
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
S
22+
TO-220FP
6000
十年配单,只做原装
ST/意法
23+
TO-220F
89630
当天发货全新原装现货
ST/意法
23+
TO-220F
50000
全新原装正品现货,支持订货
ST/意法
23+
TO-220F
61351
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST
23+
TO-220
16900
正规渠道,只有原装!
ST
25+
TO-220
27500
原装正品,价格最低!

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    特点 ·宽带0.5 - 16GHz的 ·低插入损耗;4分贝的典型值在8GHz的 ·衰减0.5dB步进到31.5分贝 ·开关速度快 ·通过提高性能的砷化镓过孔 P35 -4304-000 -200是一种高性能砷化镓单片提供6位数字衰减器的衰减步长为0.5dB31.5分贝范围。它是适用于宽带通信,仪器仪表和电子战的使用应用。衰减器是免费0V/-5V或0/-8V信号控制线的应用程序来控制按照下面的真值表。通过修改控制线,实现全衰减范围组合。模具制造,使用建设部0.5mm栅极长度的MESFET制程(S20)。它是完全

    2012-12-20