型号 功能描述 生产厂家&企业 LOGO 操作
STP3NB80

N-CHANNEL800V-4.6ohm-2.6A-TO-220/TO-220FPPowerMESHMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAYprocess,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
STP3NB80

POWERMOSFET

GENERALDESCRIPTION ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspo

SUNTAC

Suntac Electronic Corp.

SUNTAC
STP3NB80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.6A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance; -RDS(on)=6.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.6A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance; -RDS(on)=6.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-CHANNEL800V-4.6ohm-2.6A-TO-220/TO-220FPPowerMESHMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAYprocess,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

PowerMOSFET

文件:2.12073 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-CHANNEL800V-4.6ohm-2.6A-TO-220/TO-220FPPowerMESHMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAYprocess,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

PowerMOSFET

文件:1.28953 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

STP3NB80产品属性

  • 类型

    描述

  • 型号

    STP3NB80

  • 功能描述

    MOSFET N-Ch 800 Volt 3 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-3 9:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+
TO-220
8795
ST
24+
TO-220
6430
原装现货/欢迎来电咨询
ST/进口原
17+
TO-220F
6200
ST
2020+
TO-220
7400
百分百原装正品 真实公司现货库存 本公司只做原装 可
ST/意法
22+
TO-220
100000
代理渠道/只做原装/可含税
ST/意法
22+
TO-220
96516
ST/意法
24+
NA/
3305
原厂直销,现货供应,账期支持!
ST
13+
TO-220F
1350
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
2511
TO-220
16900
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
ST
24+
TO220FP
2987
只售原装自家现货!诚信经营!欢迎来电!

STP3NB80芯片相关品牌

  • ALPS
  • CRYSTEKCRYSTAL
  • Dallas
  • Hynix
  • MIC
  • MuRata
  • MURATA1
  • PERICOM
  • SAVANTIC
  • TAITRON
  • TECHPUBLIC
  • YEONHO

STP3NB80数据表相关新闻