型号 功能描述 生产厂家&企业 LOGO 操作
P380

CdSphotoconductivecell

CdSphotoconductivecellsutilizephotoconductiveeffectsinsemiconductorsthatdecreasetheirresistancewhenilluminatedbylight.Thesesensorsarenon-polarresistiveelementswithspectralresponsecharacteristicsclosetothehumaneye(luminousefficiency),thusmakingtheiroperatingcirc

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

HAMAMATSU

ThyristorSurgeSuppressors(TSS)

FeaturesandBenefits Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Eliminatesovervoltagecausedbyfastrisingtransients Moisturesensitivitylevel:Level1 Weight69mg(approximate) Nondegenerative ResponseTimeis

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

ThyristorSurgeSuppressors(TSS)

FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

ThyristorSurgeSuppressors(TSS)

FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

ThyristorSurgeSuppressors(TSS)

FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

ThyristorSurgeSuppressors(TSS)

FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

ThyristorSurgeSuppressors(TSS)

FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

ThyristorSurgeSuppressors(TSS)

FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

ThyristorSurgeSuppressors(TSS)

FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

ThyristorSurgeSuppressors(TSS)

FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

ThyristorSurgeSuppressors(TSS)

FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

Excellentcapabilityofabsorbingtransientsurge

DESCRIPTION: PxxxxSCseriesthyristorsareatypeofsemi-conductcomponent.Theyaredesignedtoprotectbasebandequipmentfromdamagingovervoltagetransients.suchasmodems,telephones,linecards,answeringmachines,FAXmachines,T1/E1,xDSLandmore. FEATURES: ◇Excellentcapabilityo

JIEJIEJIEJIE MICROELECTRONICS CO.,Ltd

捷捷微电江苏捷捷微电子股份有限公司

JIEJIE

Excellentcapabilityofabsorbingtransientsurge

DEDRIPTION: PxxxxDseriesthyristorsareatypeofsemi-conductcomponent.Theyaredesignedtoprotectbasebandequipmentfromdamagingovervoltagetransients.suchasmodems,telephones,linecards,answeringmachines,FAXmachines,T1/E1,xDSLandmore. FEATURES: ◇Excellentcapabilit

JIEJIEJIEJIE MICROELECTRONICS CO.,Ltd

捷捷微电江苏捷捷微电子股份有限公司

JIEJIE

THYRISTORSURGESUPPRESSORSTSS

FEATURES: Excellentcapabilityofab Quickresponsetosurgev Eliminatesovervoltagecau Moisturesensitivityleve Nondegenerative machines,F absorbingtransientsurge urgevoltage(nsLevel) ecausedbyfastrisingtransients level:Level1

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

SY

ThyristorSurgeSuppressors(TSS)

FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

ThyristorSurgeSuppressors(TSS)

FeaturesandBenefits Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Eliminatesovervoltagecausedbyfastrisingtransients Moisturesensitivitylevel:Level1 Weight69mg(approximate) Nondegenerative ResponseTimeis

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

Resincoatingtype(5Rtype)

Standardtypedesignedforgeneral-purpose,wideapplication CdSphotoconductivecellsutilizephotoconductiveeffectsinsemiconductorsthatdecreasetheirresistancewhenilluminatedbylight.Thesesensorsarenon-polarresistiveelementswithspectralresponsecharacteristicsclosetothe

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

HAMAMATSU

CbSphotoconductivecell

Standardtypedesignedtowithstandhighvoltageandhighpower CdSphotoconductivecellsutilizephotoconductiveeffectsinsemiconductorsthatdecreasetheirresistancewhenilluminatedbylight.Thesesensorsarenon-polarresistiveelementswithspectralresponsecharacteristicscloseto

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

HAMAMATSU

LINEMATCHINGTRANSFORMER

文件:179.03 Kbytes Page:5 Pages

ETAL

ETAL Group

ETAL

ISOLATEDFLYBACKTRANSFORMERS

文件:449.44 Kbytes Page:1 Pages

MPSINDMPS Industries, Inc.

美国芯源

MPSIND

ISOLATEDFLYBACKTRANSFORMERS

文件:449.44 Kbytes Page:1 Pages

MPSINDMPS Industries, Inc.

美国芯源

MPSIND

ISOLATEDFLYBACKTRANSFORMERS

文件:449.44 Kbytes Page:1 Pages

MPSINDMPS Industries, Inc.

美国芯源

MPSIND

ISOLATEDFLYBACKTRANSFORMERS

文件:449.44 Kbytes Page:1 Pages

MPSINDMPS Industries, Inc.

美国芯源

MPSIND

ISOLATEDFLYBACKTRANSFORMERS

文件:449.44 Kbytes Page:1 Pages

MPSINDMPS Industries, Inc.

美国芯源

MPSIND

ISOLATEDFLYBACKTRANSFORMERS

文件:449.44 Kbytes Page:1 Pages

MPSINDMPS Industries, Inc.

美国芯源

MPSIND

封装/外壳:TO-262M-2 包装:管件 描述:THYRISTOR 350V 3KA TO262M-2 电路保护 TVS - 晶闸管

ETC

知名厂家

封装/外壳:TO-218-3,TO-218AC 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:THYRISTOR 350V 5KA TO218-3 电路保护 TVS - 晶闸管

ETC

知名厂家

Excellentcapabilityofabsorbingtransientsurge

文件:228.62 Kbytes Page:5 Pages

JIEJIEJIEJIE MICROELECTRONICS CO.,Ltd

捷捷微电江苏捷捷微电子股份有限公司

JIEJIE

Excellentcapabilityofabsorbingtransientsurge

文件:241.18 Kbytes Page:5 Pages

JIEJIEJIEJIE MICROELECTRONICS CO.,Ltd

捷捷微电江苏捷捷微电子股份有限公司

JIEJIE

Excellentcapabilityofabsorbingtransientsurge

文件:737.65 Kbytes Page:5 Pages

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH

LOWDISTORTIONLINEMATCHINGTRANSFORMER

文件:178.88 Kbytes Page:5 Pages

ETAL

ETAL Group

ETAL

RODSEALS

DESCRIPTION TheBECA380profileisarod sealcomposedofasloped metalcageembeddedinrubber, andtwosealinglips. TheBECA383profileisarodseal withtheadvantageofhavinga sealingbeadontheoutsidelip;the metalcageisnotslopedcompared totheBECA380profile. A

FRANCEJOINT

France Joint

FRANCEJOINT

High-CapacitanceSnap-In

TheexcellentvalueofType380L/LXcapacitorsfindsapplicationinswitchingpowersupplyinputandoutputcircuitsandevenmotordriveswherethehighsurfaceareaofmultipleunitsinparallelapproachestheripplecapabilityofourType520Ccomputer-gradecapacitor.Type380LXdeliversmore

CDE

Cornell Dubilier Electronics

CDE

CeleronMProcessoron90nmProcess

文件:879.41 Kbytes Page:68 Pages

IntelIntel Corporation

英特尔

Intel

85?CCompact,High-CapacitanceSnap-in

文件:411.02 Kbytes Page:6 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2

Compact,High-CapacitanceSnap-in

文件:411.02 Kbytes Page:6 Pages

CDE

Cornell Dubilier Electronics

CDE

P380产品属性

  • 类型

    描述

  • 型号

    P380

  • 制造商

    Etal Group

  • 功能描述

    TRANSFORMER V.34+/V90

  • 制造商

    Etal Group

  • 功能描述

    TRANSFORMER, V.34+/V90

  • 制造商

    Etal Group

  • 功能描述

    TRANSFORMER, V.34+/V90; Primary Voltages

  • 制造商

    Etal Group

  • 功能描述

    TRANSFORMER, V.34+/V90; Primary Voltages

更新时间:2025-5-18 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VINCO
23+
MODULE
60036
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
75000
一级代理-主营优势-实惠价格-不悔选择
TECCOR
24+
DO-214
2500
只做原厂渠道 可追溯货源
捷捷微
23+
SMB
68000
捷捷微全系列供应,支持终端生产
NEC
1923+
TO220
3689
原装进口现货库存专业工厂研究所配单供货
Littelfuse力特
21+
TO-262M-2
1300
全新原装鄙视假货
TECCOR
21+
DO-214
7540
只做原装正品假一赔十!正规渠道订货!
捷捷微
24+
SMB
50000
只做原装,欢迎询价,量大价优
捷捷微
2020+
SMB
3000
原装现货支持BOM配单服务
捷捷微
24+
SMB
50000
全新原装,一手货源,全场热卖!

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  • SHARMA
  • TI1
  • Vitec
  • ZSELEC

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  • P35-4304-000-200-模拟杂项

    特点·宽带0.5-16GHz的·低插入损耗;4分贝的典型值在8GHz的·衰减0.5dB步进到31.5分贝·开关速度快·通过提高性能的砷化镓过孔P35-4304-000-200是一种高性能砷化镓单片提供6位数字衰减器的衰减步长为0.5dB31.5分贝范围。它是适用于宽带通信,仪器仪表和电子战的使用应用。衰减器是免费0V/-5V或0/-8V信号控制线的应用程序来控制按照下面的真值表。通过修改控制线,实现全衰减范围组合。模具制造,使用建设部0.5mm栅极长度的MESFET制程(S20)。它是完全

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