位置:首页 > IC中文资料第4421页 > P3203ZC
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
P3203ZC | 封装/外壳:20-SIP 包装:散装 描述:THYRISTOR 270V 400A 20SIP 电路保护 TVS - 晶闸管 | LITTELFUSE 力特 | ||
2-Phase IMVP-II & IMVP-III Core Controller for Mobile CPUs GENERAL DESCRIPTION The ADP3203 is a 1- or 2-phase hysteretic peak current dc-to-dc buck converter controller dedicated to power a mobile processor’s core. The optimized low voltage design is powered from the 3.3 V system supply and draws only 10 µA maximum in shutdown. The nominal output volta | AD 亚德诺 | |||
Bi-directional Glass passivated junction Sample Instructions for Choosing a Packing Option (1) If selecting an “L401E6” (sensitive gate, 400 V, 1 A triac in a TO-92 package), choose one of the options available for that device: • Bulk packed in 2,000 quantity • Tape and Reel with 2,000 parts per reel • Tape and Ammo with 2, | LITTELFUSE 力特 | |||
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT) HIGH CURRENT APPLICATION. FEATURES • Complementary to KTA1271. | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | |||
SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Micro8 devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to achieve lowest possible on–resistance per silicon area. They are capable of withstanding high ener | MOTOROLA 摩托罗拉 | |||
P-Channel Enhancement-Mode Vertical DMOS FETs These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperatur | SUTEX |
P3203ZC产品属性
- 类型
描述
- 型号
P3203ZC
- 功能描述
硅对称二端开关元件 12Chp 270V 500A
- RoHS
否
- 制造商
Bourns 转折电流
- VBO
40 V 最大转折电流
- IBO
800 mA
- 不重复通态电流
额定重复关闭状态电压
- VDRM
25 V
- 关闭状态漏泄电流(在VDRM_IDRM下)
保持电流(Ih
- 最大值)
50 mA
- 开启状态电压
5 V 关闭状态电容
- CO
120 pF
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
DO-214AA
P3203ZC规格书下载地址
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特点 ·宽带0.5 - 16GHz的 ·低插入损耗;4分贝的典型值在8GHz的 ·衰减0.5dB步进到31.5分贝 ·开关速度快 ·通过提高性能的砷化镓过孔 P35 -4304-000 -200是一种高性能砷化镓单片提供6位数字衰减器的衰减步长为0.5dB31.5分贝范围。它是适用于宽带通信,仪器仪表和电子战的使用应用。衰减器是免费0V/-5V或0/-8V信号控制线的应用程序来控制按照下面的真值表。通过修改控制线,实现全衰减范围组合。模具制造,使用建设部0.5mm栅极长度的MESFET制程(S20)。它是完全
2012-12-20
DdatasheetPDF页码索引
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