SIDACtor짰 Protection Thyristors Baseband Protection (Voice-DS1)

Description The SIDACtor® Balanced Series MS-013 are designed to protect baseband equipment from overvoltage transients. The patented Y configuration ensures balanced overvoltage protection. The series provides a single port surface mount solution that enables voice through DS-1 equipment to com

基带语音DS1保护

SIDACtor짰 Protection Thyristors Baseband Protection (Voice-DS1)

Description The SIDACtor® Balanced Series MS-013 are designed to protect baseband equipment from overvoltage transients. The patented Y configuration ensures balanced overvoltage protection. The series provides a single port surface mount solution that enables voice through DS-1 equipment to com

The series provides a single port surface mount solution that enables voice

Description The SIDACtor® Balanced Series MS-013 are designed to protect baseband equipment from overvoltage transients. The patented Y configuration ensures balanced overvoltage protection. The series provides a single port surface mount solution that enables voice through DS-1 equipment to com

基带语音DS1保护

封装/外壳：6-SMD，鸥翼 包装：卷带（TR） 描述：THYRISTOR 270V 250A 6SMD GW 电路保护 TVS - 晶闸管

封装/外壳：6-SMD，鸥翼 包装：散装 描述：THYRISTOR 270V 250A 6SMD GW 电路保护 TVS - 晶闸管

2-Phase IMVP-II & IMVP-III Core Controller for Mobile CPUs

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Bi-directional Glass passivated junction

Sample Instructions for Choosing a Packing Option (1) If selecting an “L401E6” (sensitive gate, 400 V, 1 A triac in a TO-92 package), choose one of the options available for that device: • Bulk packed in 2,000 quantity • Tape and Reel with 2,000 parts per reel • Tape and Ammo with 2,

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HIGH CURRENT APPLICATION. FEATURES • Complementary to KTA1271.

SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM

Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Micro8 devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to achieve lowest possible on–resistance per silicon area. They are capable of withstanding high ener

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These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperatur