SIDACtor Protection Thyristors

Description Balanced MC Series Modified TO-220 are low capacitance SIDACtor® devices designed to protect broadband equipment from damaging overvoltage transients. The patented “Y” configuration also ensures balanced overvoltage protection. The series provides a single port solution that enables

封装/外壳：TO-220-3（SMT）标片 包装：管件 描述：THYRISTOR 270V 400A TO220-3 电路保护 TVS - 晶闸管

宽带优化保护

Balanced MC Series Modified TO-220 are low capacitance SIDACtor짰 devices

Description Balanced MC Series Modified TO-220 are low capacitance SIDACtor® devices designed to protect broadband equipment from damaging overvoltage transients. The patented “Y” configuration also ensures balanced overvoltage protection. The series provides a single port solution that enables

封装/外壳：TO-220-3（SMT）标片 包装：管件 描述：SIDACTOR SYM 3CHP 270V 500A TO22 电路保护 TVS - 晶闸管

2-Phase IMVP-II & IMVP-III Core Controller for Mobile CPUs

GENERAL DESCRIPTION The ADP3203 is a 1- or 2-phase hysteretic peak current dc-to-dc buck converter controller dedicated to power a mobile processor’s core. The optimized low voltage design is powered from the 3.3 V system supply and draws only 10 µA maximum in shutdown. The nominal output volta

Bi-directional Glass passivated junction

Sample Instructions for Choosing a Packing Option (1) If selecting an “L401E6” (sensitive gate, 400 V, 1 A triac in a TO-92 package), choose one of the options available for that device: • Bulk packed in 2,000 quantity • Tape and Reel with 2,000 parts per reel • Tape and Ammo with 2,

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)

HIGH CURRENT APPLICATION. FEATURES • Complementary to KTA1271.

SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM

Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Micro8 devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to achieve lowest possible on–resistance per silicon area. They are capable of withstanding high ener

P-Channel Enhancement-Mode Vertical DMOS FETs

These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperatur