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型号 功能描述 生产厂家 企业 LOGO 操作

28F020 2048K (256K X 8) CMOS FLASH MEMORY

Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer

INTEL

英特尔

28F020 2048K (256K X 8) CMOS FLASH MEMORY

Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer

INTEL

英特尔

28F020 2048K (256K X 8) CMOS FLASH MEMORY

Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer

INTEL

英特尔

28F020 2048K (256K X 8) CMOS FLASH MEMORY

INTEL

英特尔

28F020 2048K (256K X 8) CMOS FLASH MEMORY

Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer

INTEL

英特尔

2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

GENERAL DESCRIPTION The Am28F020 is a 2 Megabit Flash memory organized as 256 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F020 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to

AMD

超威半导体

2 Megabit CMOS Flash Memory

DESCRIPTION The CAT28F020 is a high speed 256K x 8-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second. FEATURES ■ Fast Re

CATALYST

2M (256K 횞 8) Flash Memory

INTRODUCTION Sharp’s LH28F020SU-N 2M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 5.0 V single voltage operations and very high read/write performance, the LH28

SHARPSharp Corporation

夏普

262144 BY 8-BIT FLASH MEMORY

文件:312.48 Kbytes Page:21 Pages

TI

德州仪器

P28F020产品属性

  • 类型

    描述

  • 型号

    P28F020

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

更新时间:2026-5-24 16:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Intel
25+
12
公司优势库存 热卖中!!
ENE
24+
SOT23-8P
5000
全新原装正品,现货销售
24+
5000
公司存货
原装ENE
19+
SOT23-8
20000
ENE
2447
SOT23-8P
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ENE
22+
SOT23-8
20000
公司只做原装 品质保障
ENE
23+
SOT23-8
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
ENE
11+
SOT23-8
12317
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INTEL
原厂封装
9800
原装进口公司现货假一赔百
ENE
25+
SOT23-8
332
百分百原装正品 真实公司现货库存 本公司只做原装 可

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