位置：首页 > IC中文资料第236页 > P28F010
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
1024K(128Kx8)CMOSFLASHMEMORY 28F0101024K(128KX8)CMOSFLASHMEMORY Intel’s28F010CMOSflashmemoryoffersthemostcost-effectiveandreliablealternativeforread/writerandomaccessnonvolatilememory.The28F010addselectricalchip-erasureandreprogrammingtofamiliarEPROMtechnology.Memorycontentscanberewrit | IntelIntel Corporation 英特尔 |  |   | |
1024K(128Kx8)CMOSFLASHMEMORY 28F0101024K(128KX8)CMOSFLASHMEMORY Intel’s28F010CMOSflashmemoryoffersthemostcost-effectiveandreliablealternativeforread/writerandomaccessnonvolatilememory.The28F010addselectricalchip-erasureandreprogrammingtofamiliarEPROMtechnology.Memorycontentscanberewrit | IntelIntel Corporation 英特尔 | | | |
1024K(128Kx8)CMOSFLASHMEMORY 28F0101024K(128KX8)CMOSFLASHMEMORY Intel’s28F010CMOSflashmemoryoffersthemostcost-effectiveandreliablealternativeforread/writerandomaccessnonvolatilememory.The28F010addselectricalchip-erasureandreprogrammingtofamiliarEPROMtechnology.Memorycontentscanberewrit | IntelIntel Corporation 英特尔 | | | |
1024K(128Kx8)CMOSFLASHMEMORY 28F0101024K(128KX8)CMOSFLASHMEMORY Intel’s28F010CMOSflashmemoryoffersthemostcost-effectiveandreliablealternativeforread/writerandomaccessnonvolatilememory.The28F010addselectricalchip-erasureandreprogrammingtofamiliarEPROMtechnology.Memorycontentscanberewrit | IntelIntel Corporation 英特尔 | | | |
28F0101024K(128KX8)CMOSFLASHMEMORY 文件：895.48 Kbytes Page：33 Pages | IntelIntel Corporation 英特尔 | | | |
28F0101024K(128KX8)CMOSFLASHMEMORY 文件：895.48 Kbytes Page：33 Pages | IntelIntel Corporation 英特尔 | | | |
28F0101024K(128KX8)CMOSFLASHMEMORY 文件：895.48 Kbytes Page：33 Pages | IntelIntel Corporation 英特尔 | | | |
1024K(128Kx8)CMOSFLASHMEMORY 28F0101024K(128KX8)CMOSFLASHMEMORY Intel’s28F010CMOSflashmemoryoffersthemostcost-effectiveandreliablealternativeforread/writerandomaccessnonvolatilememory.The28F010addselectricalchip-erasureandreprogrammingtofamiliarEPROMtechnology.Memorycontentscanberewrit | IntelIntel Corporation 英特尔 | | | |
1Megabit(128Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemory GENERALDESCRIPTION TheAm28F010isa1MegabitFlashmemoryorganizedas128Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F010ispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedto | AMDAdvanced Micro Devices 超威半导体美国超威半导体公司 |  | | |
1Megabit(128Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemorywithEmbeddedAlgorithms GENERALDESCRIPTION TheAm28F010Aisa1MegabitFlashmemoryorganizedas128Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F010Aispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedt | AMDAdvanced Micro Devices 超威半导体美国超威半导体公司 | | | |
1MegabitCMOSFlashMemory DESCRIPTION TheCAT28F010isahighspeed128Kx8-bitelectricallyerasableandreprogrammableFlashmemoryideallysuitedforapplicationsrequiringin-systemorafter-salecodeupdates.Electricalerasureofthefullmemorycontentsisachievedtypicallywithin0.5second. FEATURES ■Fast | Catalyst Catalyst Semiconductor |  | | |
1024K(128Kx8)CMOSFLASHMEMORY 文件：300.41 Kbytes Page：23 Pages | IntelIntel Corporation 英特尔 | | |
P28F010产品属性
- 类型
描述
- 型号
P28F010
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTEL/英特尔 |
24+ |
NA/ |
20 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INTEL |
23+ |
DIP32 |
20000 |
全新原装假一赔十 |
|||
INTEL |
24+ |
DIP-32 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
INTEL |
1135 |
DIP |
19 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INT |
24+/25+ |
6 |
原装正品现货库存价优 |
||||
INTEL |
90+ |
DIP32 |
3560 |
全新原装进口自己库存优势 |
|||
INTEL |
17+ |
DIP32 |
9988 |
只做原装进口,自己库存 |
|||
INTEL |
9443 |
6 |
公司优势库存 热卖中! |
||||
INTEL |
2020+ |
DIP-32 |
18 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
INT |
23+ |
DIP |
18689 |
P28F010芯片相关品牌
P28F010规格书下载地址
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DdatasheetPDF页码索引
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