型号 功能描述 生产厂家 企业 LOGO 操作
P20N

LOW-POWER, LOW-NOISE, REGULATED HIGH-VOLTAGE SUPPLY

文件:509.81 Kbytes Page:5 Pages

XPPOWER

P20N

封装/外壳:7-DIP 模块 包装:散装 描述:DC DC CONVERTER -2000V 电源 - 板安装 直流转换器

XPP

N-CHANNEL 500V - 0.23ohm - 20A TO-220/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

STMICROELECTRONICS

意法半导体

N-channel 600V - 0.25廓 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh??Power MOSFET

Features 1. High dv/dt and avalanche capabilities 2. 100 avalanche tested 3. Low input capacitance and gate charge 4. Low gate input resistance Applications 1. Switching applications Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.26ohm - 20A TO-220-TO-220FP-TO-247 FDmesh POWER MOSFET (with FAST DIODE)

Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ High dv/dt and avalanche capabilities ■ 100 Avalanch

STMICROELECTRONICS

意法半导体

N-channel 600V - 0.25廓 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh??Power MOSFET

Features 1. High dv/dt and avalanche capabilities 2. 100% avalanche tested 3. Low input capacitance and gate charge 4. Low gate input resistance Applications 1. Switching applications Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the mul

STMICROELECTRONICS

意法半导体

N-Channel 100-V (D-S) MOSFET

文件:937.06 Kbytes Page:7 Pages

VBSEMI

微碧半导体

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

文件:364.5 Kbytes Page:12 Pages

Infineon

英飞凌

N-Channel 60 V (D-S) MOSFET

文件:1.31336 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-channel 500V - 0.20廓 - 20A - TO220/FP-D2PAK-I2PAK MDmesh??Power MOSFET

文件:317.23 Kbytes Page:14 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.26ohm - 20A TO-220-TO-220FP-TO-247 FDmesh POWER MOSFET (with FAST DIODE)

STMICROELECTRONICS

意法半导体

N-Channel 650-V (D-S) Super Junction MOSFET

文件:1.15454 Mbytes Page:11 Pages

VBSEMI

微碧半导体

P20N产品属性

  • 类型

    描述

  • 型号

    P20N

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N-CHANNEL 600V - 0.26ohm - 20A TO-220-TO-220FP-TO-247 FDmesh POWER MOSFET(with FAST DIODE)

更新时间:2025-10-19 16:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/进口原
17+
TO-220
6200
ST
23+
TO-220
16900
正规渠道,只有原装!
SST
原厂封装
9800
原装进口公司现货假一赔百
24+
8866
ST
21+
TO220
10000
只做原装,质量保证
ST/意法
2450+
TO-220F
6540
只做原装正品假一赔十为客户做到零风险!!
N/A
25+
NA
880000
明嘉莱只做原装正品现货
23+
原厂标准封装
7000
ST/意法
2406+
TO-220
650
诚信经营!进口原装!量大价优!
ST
24+
TO220
12800
原装正品现货支持实单

P20N数据表相关新闻

  • P2041NXN7PNC

    P2041NXN7PNC

    2023-11-23
  • P25-0123 3 A 尖头

    P25-0123

    2023-3-10
  • P25-0423 3 A 球面半径头

    P25-0423

    2023-3-10
  • P2020NXN2KHC

    P2020NXN2KHC

    2022-10-8
  • P2020NXN2KHC

    制造商 NXP USA Inc. 系列 QorIQ P2 包装 托盘 零件状态 有源 核心处理器 PowerPC e500v2 内核数/总线宽度 2 ??,32 位 速度 1.2GHz 协处理器/DSP - RAM 控制器 DDR2,DDR3 显示与接口控制器 以太网 10/100/1000Mbps(3) SATA - USB USB 2.0 + PHY(2) 电压 - I/O -

    2021-3-16
  • P24C02A-TSH-MIT

    P24C02A-TSH-MIT

    2019-11-8