isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 42mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

Power MOSFET

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

Power MOSFETs 120V, 20A, N-channel

文件：1.54075 Mbytes Page：7 Pages