N-Channel Logic Level Enhancement Mode Field Effect Transistor

PRODUCT SUMMARY • V(BR)DSS 25V • RDS(ON) 20mΩ • ID 32A

Released from Engineering

文件：557.78 Kbytes Page：1 Pages

Released from Engineering

文件：554.58 Kbytes Page：1 Pages

包装：散装 描述：BUZZER ELEMENT STD 3.6KHZ 20MM 音频设备， 产品 蜂鸣器元件，压电弯曲器，压电蜂鸣器

蜂鸣片

蜂鸣片

包装：散装 描述：BUZZER ELEMENT FDBK 3.6KHZ 20MM 音频设备， 产品 蜂鸣器元件，压电弯曲器，压电蜂鸣器

Released from Engineering

文件：552.29 Kbytes Page：1 Pages

Released from Engineering

文件：549.69 Kbytes Page：1 Pages

蜂鸣片

N-Channel 30-V (D-S) MOSFET

文件：1.01522 Mbytes Page：8 Pages

N-Channel 60 V (D-S) MOSFET

文件：1.00396 Mbytes Page：8 Pages

N-Channel Enhancement Mode MOSFET

文件：806.17 Kbytes Page：8 Pages

P-Channel Enhancement Mode MOSFET

文件：463.53 Kbytes Page：5 Pages

P-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：293.02 Kbytes Page：5 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.00258 Mbytes Page：9 Pages

P-Channel Logic Level Enhancement Mode MOSFET

文件：471.59 Kbytes Page：5 Pages

Dual P-Channel Enhancement Mode Field Effect Transistor

文件：262.8 Kbytes Page：4 Pages

P-Channel Enhancement Mode MOSFET

文件：359.84 Kbytes Page：5 Pages

N- and P-Channel 40 V (D-S) MOSFET

文件：2.6227 Mbytes Page：13 Pages

EU Power Supply Cord with IEC Connector C13, V-Lock, straight

Description - Power Cord, Protection class I, Pin temperature 70 °C, - with V-Lock interlocking system

Gas Discharge Tube Surge Protector

Bourns offers a low-cost surface mount (SM) 2-electrode GDT surge protection device. The 2003 Series is ideal for broadband protection due to its ultra-low capacitance. The 2003 Series offers superior protection characteristics suitable for telecommunications, commercial and industrial application

HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS

Ideally suited for interfacing between low-level logic circuitry and multiple peripheral power loads, the Series ULN20xxA/L high-voltage, high-current Darlington arrays feature continuous load current ratings to 500 mA for each of the seven drivers. At an appropriate duty cycle depending on ambien

HIGH QUALITY NETWORKING TRANSFORMERS

文件：28.2 Kbytes Page：2 Pages

Snap Bushings

文件：133.28 Kbytes Page：1 Pages