Druckkontaktierter IGBT Press Pack IGBT

Features  Press Pack IGBT with integrated Freewheeling Diode  Long term Short on Fail behavior  High dynamic robustness  High short-circuit capability  Low VCEsat  Trench IGBT 3

4500 V、2000 A 压接式 IGBT

\n优势:\n• Full long term short-on-fail\n• Explosion proofed housing\n• Highest power cycling capability\n• Double side cooling\n• Wide range of clamping force;

Druckkontaktierter IGBT Press Pack IGBT

Features  Press Pack IGBT with integrated Freewheeling Diode  Long term Short on Fail behavior  High dynamic robustness  High short-circuit capability  Low VCEsat  Trench IGBT 3

封装/外壳：DO-200AE 包装：散装 描述：PRESS PACK IGBT BG-P16826K-1 分立半导体产品 晶体管 - IGBT - 模块

封装/外壳：TO-200AF 包装：托盘 描述：PRESS PACK IGBT 分立半导体产品 晶体管 - IGBT - 模块