isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.28Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.2 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ LOW LEAKAGE CURRENT ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE I2PA

15A, 250V N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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N-Channel Power MOSFET

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