N-channel 500 V, 0.4, 8.5 A MDmesh II Power MOSFET in DPAK, TO-220FP and TO-220

Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding

N-channel 500 V, 0.4, 8.5 A MDmesh II Power MOSFET in DPAK, TO-220FP and TO-220

Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding

N-channel 500 V, 0.4 廓, 8.5 A MDmesh??II Power MOSFET in DPAK, TO-220FP and TO-220

Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding

N-Channel 650 V (D-S) MOSFET

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Isc N-Channel MOSFET Transistor

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