| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
P11N65ZA | N-Channel 650 V (D-S) MOSFET 文件：1.033069 Mbytes Page：8 Pages | VBSEMI 微碧半导体 |   | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 8A, RDS(ON) = 0.42W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 8A, RDS(ON) = 0.42W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. | CET-MOS 华瑞 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
100 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
1122+ |
TO-220 |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
2025+ |
TO-220 |
5185 |
全新原厂原装产品、公司现货销售 |
|||
ST |
23+ |
TO220 |
16900 |
正规渠道,只有原装! |
|||
ST/意法 |
23+ |
TO-220 |
56688 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ST |
24+ |
TO220 |
598000 |
原装现货假一赔十 |
|||
24+ |
200 |
||||||
ST/进口原 |
17+ |
TO-220 |
6200 |
||||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
P11N65ZA规格书下载地址
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2019-2-15
DdatasheetPDF页码索引
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