N-Channel Enhancement Mode MOSFET

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Power MOSFET

MOSFETs

N-Channel Enhancement Mode MOSFET

文件：836.17 Kbytes Page：9 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

SWITCHMODE??Power Rectifiers

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 60 to 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara

Multistandard programmable analog CMOS transmission IC

GENERAL DESCRIPTION The PCA1070 is a CMOS integrated circuit performing all speech and line interface functions in fully electronic telephone sets. The device requires a minimum of external components. The transmission parameters are programmable via the I2C-bus. This makes the IC adaptable to ne

Multistandard programmable analog CMOS transmission IC

GENERAL DESCRIPTION The PCA1070 is a CMOS integrated circuit performing all speech and line interface functions in fully electronic telephone sets. The device requires a minimum of external components. The transmission parameters are programmable via the I2C-bus. This makes the IC adaptable to ne

Multistandard programmable analog CMOS transmission IC

GENERAL DESCRIPTION The PCA1070 is a CMOS integrated circuit performing all speech and line interface functions in fully electronic telephone sets. The device requires a minimum of external components. The transmission parameters are programmable via the I2C-bus. This makes the IC adaptable to ne