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型号 功能描述 生产厂家 企业 LOGO 操作
P0900ZB

封装/外壳:12-SIP 包装:卷带(TR) 描述:THYRISTOR 75V 250A 12SIP 电路保护 TVS - 晶闸管

LITTELFUSE

力特

SIDACtor Device

DO-214AA SIDACtor solid state protection devices protect telecommunications equipment such as modems, line cards, fax machines, and other CPE. SIDACtor devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and

TECCOR

Cascadable Silicon Bipolar MMIC Amplifier

Description The MSA-0900 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for very wide bandwidth industrial and military applications that require flat gain and low VSWR. Features • Broadband, Minimum Ripple Cascadable 50 Ω Gain B

HP

安捷伦

100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

Features • 100A Peak Pulse Current @ 10/1000μs • 400A Peak Pulse Current @ 8/20μs • 58 - 320V Stand-Off Voltages • Oxide-Glass Passivated Junction • Bidirectional Protection In a Single Device • High Off-State Impedance and Low On-State Voltage • Helps Equipment Meet GR-1089-CORE, IEC 61000

DIODES

美台半导体

30A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

Features • 30A Peak Pulse Current @ 10/1000μs • 150A Peak Pulse Current @ 8/20μs • 58 - 320V Stand-Off Voltages • Oxide-Glass Passivated Junction • Bidirectional Protection In a Single Device • High Off-State impedance and Low On-State Voltage • Helps Equipment Meet GR-1089-CORE, IEC 61000-

DIODES

美台半导体

50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

Features • 50A Peak Pulse Current @ 10/1000μs • 250A Peak Pulse Current @ 8/20μs • 58 - 320V Stand-Off Voltages • Oxide-Glass Passivated Junction • Bidirectional Protection In a Single Device • High Off-State impedance and Low On-State Voltage • Helps Equipment Meet GR-1089-CORE, IEC 61000-

DIODES

美台半导体

P0900ZB产品属性

  • 类型

    描述

  • 型号

    P0900ZB

  • 功能描述

    硅对称二端开关元件 4Chp 75V 100A

  • RoHS

  • 制造商

    Bourns 转折电流

  • VBO

    40 V 最大转折电流

  • IBO

    800 mA

  • 不重复通态电流

    额定重复关闭状态电压

  • VDRM

    25 V

  • 关闭状态漏泄电流(在VDRM_IDRM下)

    保持电流(Ih

  • 最大值)

    50 mA

  • 开启状态电压

    5 V 关闭状态电容

  • CO

    120 pF

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    DO-214AA

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