N-Channel Enhancement Mode Field Effect Transistor

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Mosfet

Power MOSFET

High Performance Isolated Collector Silicon Bipolar Transistor

Description Hewlett Packard’s HBFP-0420 is a high performance isolated collector silicon bipolar junction transistor housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. Features • Ideal for High Gain, Low Noise Applications • Transition Frequency fT = 25 GHz • Typical Pe

High Performance Isolated Collector Silicon Bipolar Transistor

Description Hewlett Packard’s HBFP-0420 is a high performance isolated collector silicon bipolar junction transistor housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. Features • Ideal for High Gain, Low Noise Applications • Transition Frequency fT = 25 GHz • Typical Pe

Cascadable Silicon Bipolar MMIC Amplifier

Description The MSA-0420 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers

UHF ASK/FSK/FM Receiver

DEVICE OVERVIEW The rfRXD0420/0920 are low cost, compact single frequency short-range radio receivers requiring only a minimum number of external components for a complete receiver system. The rfRXD0420 covers the receive frequency range of 300 MHz to 450 MHz and the rfRXD0920 covers 800MHz to

Ceramic Singlelayer Feed-Through Filters 400 VDC

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