丝印代码：P03B；Thyristor Surge Suppressors (TSS)

Features and Benefits Excellent capability of absorbing transient surge Quick response to surge voltage (ns Level) Eliminates over voltage caused by fast rising transients Moisture sensitivity level: Level 1 Weight 69 mg (approximate) Non degenerative Response Time is

Thyristor Surge Suppressors

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N-Channel Enhancement-Mode Vertical DMOS Power FETs?

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedanc

N-Channel Enhancement-Mode Vertical DMOS Power FETs?

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedanc

TMOS FET Transistor

TMOS FET Transistor N–Channel — Enhancement

Silicon planar type

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Silicon PIN Photodiodes

文件：103.53 Kbytes Page：4 Pages