gas plasma arresters-package dimensions/specifications

DO-214AA SIDACtor solid state protection devices protect telecommunications equipment such as modems, line cards, and CPE (telephones, answering machines, and fax machines). SIDACtor devices enable equipment to comply with various regulatory requirements including GR 1089, ITU K.20, K.21 and K.

基带语音DS1保护

The series provides a surface mount solution that enables equipment to comply

Description SIDACtor® Series DO-214AA are designed to protect baseband equipment such as modems, line cards, CPE and DSL from damaging overvoltage transients. The series provides a surface mount solution that enables equipment to comply with global regulatory standards. Features and Benefits

Low voltage overshoot, Low on-state voltage, Low capacitance

Description SIDACtor® Series DO-214AA are designed to protect baseband equipment such as modems, line cards, CPE and DSL from damaging overvoltage transients. The series provides a surface mount solution that enables equipment to comply with global regulatory standards. Features and Benefits

SIDACtor Protection Thyristors

SIDACtor Protection Thyristors

Baseband Protection (Voice-DS1)

Description SIDACtor® Series DO-214AA are designed to protect baseband equipment such as modems, line cards, CPE and DSL from damaging overvoltage transients. The series provides a surface mount solution that enables equipment to comply with global regulatory standards. Features and Benefits

SIDACtor Protection Thyristors

Protection Thyristor

文件：673.6 Kbytes Page：8 Pages

丝印代码：P03B；Thyristor Surge Suppressors

文件：324.39 Kbytes Page：6 Pages

SIDACtor Protection Thyristors

文件：376.04 Kbytes Page：7 Pages

封装/外壳：DO-214AA，SMB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：THYRISTOR 25V 250A DO214AA 电路保护 TVS - 晶闸管

SIDACtor Protection Thyristors

文件：2.27513 Mbytes Page：5 Pages

SIDACtor Protection Thyristors

文件：2.86801 Mbytes Page：5 Pages

N-Channel Enhancement-Mode Vertical DMOS Power FETs?

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedanc

TMOS FET Transistor

TMOS FET Transistor N–Channel — Enhancement

N-Channel Enhancement-Mode Vertical DMOS Power FETs?

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedanc

Silicon planar type

文件：49.05 Kbytes Page：4 Pages

Silicon PIN Photodiodes

文件：103.53 Kbytes Page：4 Pages