Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor

This integrated device represents a new level of safety and board−space reduction by combining the 20 V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics.

Features

• Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor)

• Higher Efficiency Extending Battery Life

• Logic Level Gate Drive (MOSFET)

• Performance DFN Package

• This is a Pb−Free Device

Applications

• Power Management in Portable and Battery−Powered Products; i.e.,

Cellular and Cordless Telephones and PCMCIA Cards