Description

Silicon Carbide (SiC) MOSFET uses a completely new technology

that provides superior switching performance and higher reliability

compared to Silicon. In addition, the low ON resistance and compact

chip size ensure low capacitance and gate charge. Consequently,

system benefits include highest efficiency, faster operation frequency,

increased power density, reduced EMI, and reduced system size.

Features

• Typ. RDS(on) = 13 m @ VGS = 18 V

• Low Switching Losses (Typ. EON 563 J at 75 A, 800 V)

Applications

• Solar Inverters

• Electric Vehicle Charging Stations

• Uninterruptible Power Supplies (UPS)

• Energy Storage Systems

• Switch Mode Power Supplies (SMPS)