HDPlus devices are an advanced HDTMOS™ series of power MOSFET which utilize ON’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area while incorporating smart features. They are capable of withstanding high energy in the avalanche and commutation modes. The avalanche energy is specified to eliminate guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

This HDPlus device features an integrated Gate–to–Source clamp for ESD protection. Also, this device features a mirror FET for current monitoring.

• ±3.5 Current Mirror Accuracy in Linear Region

• ±15 Current Mirror Accuracy in Low Current Saturation Region

• IDSS Specified at Elevated Temperature

• Avalanche Energy Specified

• Current Sense FET

• ESD Protected on the Main and the Mirror FET