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NCP51810AMNTWG中文资料

厂家型号

NCP51810AMNTWG

文件大小

774.9Kbytes

页面数量

20

功能描述

High Speed Half-Bridge Driver for GaN Power Switches

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

ONSEMI

NCP51810AMNTWG数据手册规格书PDF详情

The NCP51810 high−speed, gate driver is designed to meet the

stringent requirements of driving enhancement mode (e−mode), high

electron mobility transistor (HEMT), gallium nitrade (GaN) power

switches in medium−voltage half−bridge DC−DC application. The

NCP51810 offers short and matched propagation delays with

advanced level shift technology providing −3.5 V to +150 V (typical)

common mode voltage range for the high−side drive and −3.5 V to

+3.5 V common mode voltage range for the low−side drive. In

addition, the device provides stable dV/dt operation rated up to 200

V/ns for both driver output stages in high speed switching

applications.

To fully protect the gate of the GaN power transistor against

excessive voltage stress, both drive stages employ a dedicated voltage

regulator to accurately maintain the gate−source drive signal

amplitude. The circuit actively regulates the driver’s bias rails and thus

protects against potential gate−source over−voltage under various

operating conditions.

The NCP51810 offers important protection functions such as

independent under−voltage lockout (UVLO), monitoring VDD bias

voltage and VDDH and VDDL driver bias and thermal shutdown

based on die junction temperature of the device. Programmable

dead−time control can be configured to prevent cross−conduction.

Features

• 150 V, Integrated High−Side and Low−Side Gate Drivers

• UVLO Protections for VDD High and Low−Side Drivers

• Dual TTL Compatible Schmitt Trigger Inputs

• Split Output Allows Independent Turn−ON/Turn−OFF Adjustment

• Source Capability: 1 A; Sink Capability: 2 A

• Separated HO and LO Driver Output Stages

• 1 ns Rise and Fall Times Optimized for GaN Devices

• SW and PGND: Negative Voltage Transient up to 3.5 V

• 200 V/ns dV/dt Rating for all SW and PGND Referenced Circuitry

• Maximum Propagation Delay of Less Than 50 ns

• Matched Propagation Delays to Less Than 5 ns

• User Programmable Dead−Time Control

• Thermal Shutdown (TSD)

Typical Applications

• Driving GaN Power Transistors used in Full or Half−Bridge, LLC,

Active Clamp Flyback or Forward and Synchronous Rectifier

Topologies

• 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,

Industrial Modules

更新时间:2025-10-12 22:59:00
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con
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