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NCP51810AMNTWG中文资料
NCP51810AMNTWG数据手册规格书PDF详情
The NCP51810 high−speed, gate driver is designed to meet the
stringent requirements of driving enhancement mode (e−mode), high
electron mobility transistor (HEMT), gallium nitrade (GaN) power
switches in medium−voltage half−bridge DC−DC application. The
NCP51810 offers short and matched propagation delays with
advanced level shift technology providing −3.5 V to +150 V (typical)
common mode voltage range for the high−side drive and −3.5 V to
+3.5 V common mode voltage range for the low−side drive. In
addition, the device provides stable dV/dt operation rated up to 200
V/ns for both driver output stages in high speed switching
applications.
To fully protect the gate of the GaN power transistor against
excessive voltage stress, both drive stages employ a dedicated voltage
regulator to accurately maintain the gate−source drive signal
amplitude. The circuit actively regulates the driver’s bias rails and thus
protects against potential gate−source over−voltage under various
operating conditions.
The NCP51810 offers important protection functions such as
independent under−voltage lockout (UVLO), monitoring VDD bias
voltage and VDDH and VDDL driver bias and thermal shutdown
based on die junction temperature of the device. Programmable
dead−time control can be configured to prevent cross−conduction.
Features
• 150 V, Integrated High−Side and Low−Side Gate Drivers
• UVLO Protections for VDD High and Low−Side Drivers
• Dual TTL Compatible Schmitt Trigger Inputs
• Split Output Allows Independent Turn−ON/Turn−OFF Adjustment
• Source Capability: 1 A; Sink Capability: 2 A
• Separated HO and LO Driver Output Stages
• 1 ns Rise and Fall Times Optimized for GaN Devices
• SW and PGND: Negative Voltage Transient up to 3.5 V
• 200 V/ns dV/dt Rating for all SW and PGND Referenced Circuitry
• Maximum Propagation Delay of Less Than 50 ns
• Matched Propagation Delays to Less Than 5 ns
• User Programmable Dead−Time Control
• Thermal Shutdown (TSD)
Typical Applications
• Driving GaN Power Transistors used in Full or Half−Bridge, LLC,
Active Clamp Flyback or Forward and Synchronous Rectifier
Topologies
• 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
Industrial Modules
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
QFN-15(4 |
3727 |
深耕行业12年,可提供技术支持。 |
|||
onsemi |
25+ |
15-VFQFN |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
onsemi |
21+ |
3990 |
只做原装,优势渠道 ,欢迎实单联系 |
||||
onsemi(安森美) |
2021+ |
QFN-15 |
499 |
||||
ON/安森美 |
25+ |
原厂封装 |
10280 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
|||
ON Sem |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ON |
24+ |
QFN-15 |
25000 |
ON全系列可订货 |
|||
ON SEMICONDUCTOR |
24+ |
con |
35960 |
查现货到京北通宇商城 |
|||
ON Semiconductor |
2024 |
3927 |
全新、原装 |
||||
ON |
NEW |
SOP8 |
28610 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
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NCP51810AMNTWG 芯片相关型号
- 1584926
- 1584927
- 1584928
- 1584929
- ATS-14F-42-C1-R0
- ATS-14F-42-C3-R0
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- ATS-15H-146-C2-R0
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- ATS-15H-174-C2-R0
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- ATS-15H-178-C2-R0
- GJM1555C1HR60BB01D
- INA4181A3QPWRQ1
- ISCNH375W
- MFU0805FF06300E000
- MFU0805FF06300E100
- MFU0805FF06300E500
- MFU0805FF06300P500
- NCP51810
- RMCS0201DT4K70-HP
- RMCS0201FG0R00-HP
- RMCS0201FG100K-HP
- RMCS0201FG1M02-HP
- RMCS0201FG1R00-HP
- RMCS0201FG4K70-HP
- RMCS0201FT0R00-HP
- RMCS0201FT100K-HP
- SMA6J6.0A
- SMA6J85A
ONSEMI相关芯片制造商
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