位置:NCP51810 > NCP51810详情

NCP51810中文资料

厂家型号

NCP51810

文件大小

774.9Kbytes

页面数量

20

功能描述

High Speed Half-Bridge Driver for GaN Power Switches

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

ONSEMI

NCP51810数据手册规格书PDF详情

The NCP51810 high−speed, gate driver is designed to meet the

stringent requirements of driving enhancement mode (e−mode), high

electron mobility transistor (HEMT), gallium nitrade (GaN) power

switches in medium−voltage half−bridge DC−DC application. The

NCP51810 offers short and matched propagation delays with

advanced level shift technology providing −3.5 V to +150 V (typical)

common mode voltage range for the high−side drive and −3.5 V to

+3.5 V common mode voltage range for the low−side drive. In

addition, the device provides stable dV/dt operation rated up to 200

V/ns for both driver output stages in high speed switching

applications.

To fully protect the gate of the GaN power transistor against

excessive voltage stress, both drive stages employ a dedicated voltage

regulator to accurately maintain the gate−source drive signal

amplitude. The circuit actively regulates the driver’s bias rails and thus

protects against potential gate−source over−voltage under various

operating conditions.

The NCP51810 offers important protection functions such as

independent under−voltage lockout (UVLO), monitoring VDD bias

voltage and VDDH and VDDL driver bias and thermal shutdown

based on die junction temperature of the device. Programmable

dead−time control can be configured to prevent cross−conduction.

Features

• 150 V, Integrated High−Side and Low−Side Gate Drivers

• UVLO Protections for VDD High and Low−Side Drivers

• Dual TTL Compatible Schmitt Trigger Inputs

• Split Output Allows Independent Turn−ON/Turn−OFF Adjustment

• Source Capability: 1 A; Sink Capability: 2 A

• Separated HO and LO Driver Output Stages

• 1 ns Rise and Fall Times Optimized for GaN Devices

• SW and PGND: Negative Voltage Transient up to 3.5 V

• 200 V/ns dV/dt Rating for all SW and PGND Referenced Circuitry

• Maximum Propagation Delay of Less Than 50 ns

• Matched Propagation Delays to Less Than 5 ns

• User Programmable Dead−Time Control

• Thermal Shutdown (TSD)

Typical Applications

• Driving GaN Power Transistors used in Full or Half−Bridge, LLC,

Active Clamp Flyback or Forward and Synchronous Rectifier

Topologies

• 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,

Industrial Modules

更新时间:2026-2-1 22:59:00
供应商 型号 品牌 批号 封装 库存 备注 价格
ONSEMI
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
onsemi
25+
15-VFQFN
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
onsemi
21+
3990
只做原装,优势渠道 ,欢迎实单联系
ONSEMI
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
onsemi
24+
4
加QQ:78517935原装正品有单必成
onsemi(安森美)
2021+
QFN-15
499
ON SEMICONDUCTOR
24+
con
35960
查现货到京北通宇商城
ON Semiconductor
2024
3927
全新、原装
ON
26+
SOP8
28610
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
ON
2025+
SOP8
3665
全新原厂原装产品、公司现货销售