General Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

· 7.5 A, 20 V. RDS(ON) = 18 mW @ VGS = 4.5 V RDS(ON) = 24 mW @ VGS = 2.5 V

· Low gate charge (12 nC)

· High performance trench technology for extremely low RDS(ON)

· High power and current handling capability