General Description

This N-Channel MOSFET is produced using ON Semi-conductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

-Typ rDS(on) = 38mΩ at VGS = 10V, ID = 50A

-Typ Qg(TOT) = 78nC at VGS = 10V

-Fast switching speed

-Low gate charge

-High performance trench technology for extremely lowRDS(on)

-High power and current handling capability

-Qualified to AEC Q101

-RoHS Compliant

Applications

-PDP application

-Hybrid Electric Vehicle DC/DC converters