Vertical Cavity Surface Emitting Laser in ST Optical Sub-Assembly

Description: The OPV315YBT is a high performance 850nm VCSEL packaged for high speed communication links. OPV315YBT combines all the performance advantages of a VCSEL with the addition of a power monitor diode for precise control of optical power. This product’s combination of features including

Vertical cavity surface emitting laser in FC optical sub-assembly

•850 nm VCSEL technology\n• High thermal stability\n• Up to 2.5 Gbps\n• Recommended for multimode fiber applications\n• Microbead lens\n• Pin out and attenuation options available upon request\n• Burned in for communication level reliability\n• High optical coupling to MM fiber\n• ST style receptacl;

封装/外壳：径向，罐，3 引线（5.4mm，TO-46） 描述：LASER DIODE 850NM 0.75MW TO46 光电器件 激光二极管，模块

Technical Data

文件：332.69 Kbytes Page：4 Pages

Vertical Cavity Surface Emitting Laser in ST Optical Sub-Assembly

文件：178.31 Kbytes Page：3 Pages

Vertical Cavity Surface Emitting Laser in FC Optical Sub-Assembly

文件：769.67 Kbytes Page：3 Pages

Vertical Cavity Surface Emitting Laser in ST Optical Sub-Assembly

文件：178.31 Kbytes Page：3 Pages

Vertical Cavity Surface Emitting Laser in ST Optical Sub-Assembly

文件：178.31 Kbytes Page：3 Pages

封装/外壳：面板安装，ST 连接器 描述：LASER DIODE 850NM PANEL MOUNT ST 光电器件 激光二极管，模块

激光二极管

Vertical Cavity Surface Emitting Laser in FC Optical Sub-Assembly

文件：226.01 Kbytes Page：5 Pages

激光二极管

Technical Data

文件：332.69 Kbytes Page：4 Pages

Vertical Cavity Surface Emitting Laser in ST Optical Sub-Assembly

文件：178.31 Kbytes Page：3 Pages

Vertical Cavity Surface Emitting Laser in FC Optical Sub-Assembly

文件：769.67 Kbytes Page：3 Pages

Vertical Cavity Surface Emitting Laser in ST Optical Sub-Assembly

文件：178.31 Kbytes Page：3 Pages

Vertical Cavity Surface Emitting Laser in FC Optical Sub-Assembly

文件：226.01 Kbytes Page：5 Pages

Low-voltage stabistor

DESCRIPTION Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. FEATURES • Low-voltage stabilization • Forward voltage range: 480 mV to 1050 mV • Total power dissipation: max. 350 mW. APPLICATIONS • Low-voltage stabilization e.g. – Bias

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUH315 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. ■ STMicroelectronics

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUH315D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. ■ STMicroelectronic

Silicon NPN Transistor, Medium Power Amp

Features: • AF – HF Medium Power Amplifier

10 mm Seven Segment Display

Description The TDS.31 series are 10 mm character seven segment LED displays in a very compact package. The displays are designed for a viewing distance up to 6 meters and available in four bright colors. The grey package surface and the evenly lighted untinted segments provide an optimum