PHOTOLOGIC HERMETIC SENSORS

Features: ● Four output options ● High noise immunity ● Direct TTL/LSTTL interface ● TO-18 hermetic package ● Mechanically and spectrally matched to the OP130 series devices ● Two sensitivity options ● Data rate 200 kBaud

封装/外壳：TO-18 小型 包装：散装 描述：SENSOR PHOTOLOGIC HERMETIC TO-18 传感器，变送器 光学传感器 - 光检测器 - 逻辑输出

PHOTOLOGIC HERMETIC SENSORS

Features: ● Four output options ● High noise immunity ● Direct TTL/LSTTL interface ● TO-18 hermetic package ● Mechanically and spectrally matched to the OP130 series devices ● Two sensitivity options ● Data rate 200 kBaud

Photologic Hermetic Sensors

Description: All OPL800, OPL801, OPL820 and OPL821 sensors consist of a photodiode, a linear amplifier and a Schmitt trigger on a single silicon chip (monolithic chip for OPL820 and OPL821). OPL810, OPL811, OPL812 and OPL813 sensors also have a voltage regulator added to their photologic chips. E

封装/外壳：TO-18 小型 包装：散装 描述：SENSOR PHOTOLOGIC HERMETIC TO-18 传感器，变送器 光学传感器 - 光检测器 - 逻辑输出

Integrated Circuit Audio Power Amplifier, 1W

Description: The NTE812 is a monolithic integrated circuit in a 14–Lead DIP type package designed for use in driver and power amplifier applications at frequencies from 50Hz to 40kHz. This device will deliver up to 1W RMS output power into an 8Ω load. The high input impedance and low standby curr

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M