Fiber Optic High Speed PIN Photodiode

The OPF480 is a low noise silicon PIN photodiode mounted in a low cost package for fiber optic applications. It offers fast response at moderate bias and is compatible with LED and laser diode sources in the 800-1000 nm wavelength region. Low capacitance improves signal to noise performance in typ

FIBER OPTIC DETECTOR

Description: The OPF480 is a low noise silicon PIN photodiode mounted in a low cost package for fiber opƟc applicaƟons. It offers fast response at moderate bias and is compaƟble with LED and laser diode sources in the 800-1000 nm wavelength region. Low capacitance improves signal to noise perform

Fiber Optic Detector

•Electrically isolated plastic cap package\n• High speed, low capacitance\n• Designed to self align in the 0.228 diameter bore of standard fiber optic receptacles\n• Press fit simplified component installation\n• 100MHz operation minimum;

包装：散装 描述：PHOTODIODE FBR-OPTIC H-SPEED PIN 光电器件 光纤 - 接收器

Fiber Optic Detector

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NPN wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. FEATURES • High power gain • High efficiency • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capaci

丝印代码：P6；NPN wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. FEATURES • High power gain • High efficiency • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capaci

Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz

Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions. Features: • Desi

Metal Oxide Varistors (MOV)

Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby

Shottky barrier diode

Features High reliability Small mold type Low VF Application Small current rectification