SLOTTED OPTICAL SWITCHES

Description: Each OPB820 and OPB821 device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wid

Slotted Optical Switch

Description: Each OPB820 and OPB821Z device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wi

Slotted Optical Switch

Description: Each OPB820 and OPB821 device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wid

封装/外壳：PCB 安装 包装：管件 描述：SENSOR OPT SLOT PHOTOTRAN PCB MT 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 晶体管输出

Slotted optical switch

Slotted Optical Switch

Description: Each OPB820 and OPB821 device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wid

Slotted Optical Switch

Description: Each OPB820 and OPB821Z device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wi

SLOTTED OPTICAL SWITCHES

Description: Each OPB820 and OPB821 device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wid

SLOTTED OPTICAL SWITCHES

Description: Each OPB820 and OPB821 device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wid

Slotted Optical Switch

Description: Each OPB820 and OPB821Z device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wi

Slotted Optical Switch

Description: Each OPB820 and OPB821 device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wid

Slotted Optical Switch

Description: Each OPB820 and OPB821 device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wid

Slotted Optical Switch

Description: Each OPB820 and OPB821Z device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wi

SLOTTED OPTICAL SWITCHES

Description: Each OPB820 and OPB821 device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wid

Slotted optical switch.

Slotted Switch, P Package

封装/外壳：PCB 安装 包装：散装 描述：SENSOR OPT SLOT PHOTOTRAN PCB MT 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 晶体管输出

POWER INDUCTOR

●FEATURE 1. Excellent solder heat resistance(add “C” is for high current type) 2. Low voltage drops and small variations inductance ●APPLICATION 1. DC power supply circuits 2. Power line choke coils…etc

WIRE WOUND SMD INDUCTOR

●FEATURE 1. Low core loss for high frequency power application 2. Large terminal surface ●APPLICATION 1. Portable communication equipment, notebook computer

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

Screw/plug-in terminal strip Screw/screwless connection

The terminal strip 820 with pitch 10 mm has a dual wire terminal connector on one side. Here, the leads are inserted and clamped all the way to the stop. These terminal strips are designed for solid conductors. The opposite side is equipped with screw connections with rectangular clamping spac

Panel Mount, Shocksafe 5x20mm Fuses

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