SLOTTED OPTICAL SWITCHES

Description: Each OPB820 and OPB821 device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wid

Slotted Optical Switch

Description: Each OPB820 and OPB821 device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wid

Slotted Optical Switch

Description: Each OPB820 and OPB821Z device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wi

Slotted optical switch

•Non-contact switching\n• Four standard aperture sizes for high resolution\n• Low profile\n• 0.080” (2.03 mm) wide, 0.250” (8.89 mm) deep slot\n• Choice of PCBoard or wire mountings;

封装/外壳：PCB 安装 包装：管件 描述：SENSOR OPT SLOT PHOTOTRAN PCB MT 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 晶体管输出

SLOTTED OPTICAL SWITCHES

Description: Each OPB820 and OPB821 device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wid

Slotted Optical Switch

Description: Each OPB820 and OPB821 device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wid

Slotted Optical Switch

Description: Each OPB820 and OPB821Z device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wi

Slotted Optical Switch

Description: Each OPB820 and OPB821Z device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wi

Slotted Optical Switch

Description: Each OPB820 and OPB821 device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wid

SLOTTED OPTICAL SWITCHES

Description: Each OPB820 and OPB821 device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wid

SLOTTED OPTICAL SWITCHES

Description: Each OPB820 and OPB821 device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wid

Slotted Optical Switch

Description: Each OPB820 and OPB821 device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wid

Slotted Optical Switch

Description: Each OPB820 and OPB821Z device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot. Each device in this series has a 0.040” (1.02 mm) wi

Slotted optical switch.

Slotted Switch, P Package

封装/外壳：PCB 安装 包装：散装 描述：SENSOR OPT SLOT PHOTOTRAN PCB MT 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 晶体管输出

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

8/16-bit Data Bus Flash Memory Card

DESCRIPTION The MF8XXX-GMCAVXX is a flash memory card which uses eight-megabit or sixteen megabit flash electrically erasable and programmable read only memory IC’s as common memory and a 64-kilobit electrically erasable and programmable read only memory as attribute memory. The MF8XXX-GNCAVXX i

JFET RF AMPLIFIER

JFET RF AMPLIFIER N-CHANNEL - DEPLETION

ULTRAFAST RECTIFIERS 8 AMPERES 200-400-600 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets U

ULTRAFAST RECTIFIER 8 AMPERES 200 VOLTS

SWITCHMODE Power Rectifier Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 ns Recovery Times • 150°C Operating Junction Temperature • Epoxy Meets UL94, VO @ 1/8″ • High Temperature