Photologic Reflective Object Sensors

Description The OPB760N series of reflective assemblies feature Photologic® output. This electrical output can be specified as either TTL Totem Pole or TTL Open Collector. Either may be supplied with inverter or buffer output polarity. All have the added stability of a built-in hysteresis ampli

包装：散装 描述：SENSOR REFLCTV 5.58MM TOTEM POLE 传感器，变送器 光学传感器 - 光电，工业

Photologic Reflective Object Sensor

Description: The OPB760N, OPB760T, OPB770N and OPB770T series of reflecƟve assemblies feature Photologic® output. The electrical output can be specified as either TTL Totem-Pole or TTL Open-Collector, either of which can be supplied with inverter or buffer output polarity. OPB760N and OPB760T se

Photologic® Reflective Object Sensor

Description: The OPB760N, OPB760T and OPB770T series of reflective assemblies feature Photologic® output. The electrical output can be specified as either TTL Totem-Pole or TTL Open-Collector, either of which can be supplied with inverter or buffer output polarity. Features: • Choice of mountin

包装：散装 描述：SENSOR REFLCTV 5.58MM TOTEM POLE 传感器，变送器 光学传感器 - 光电，工业

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 3870 A Surge current 50 kA

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 4230 A Surge current 50 kA

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions

NPN SILICON POWER TRANSISTOR

NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 2.5 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 850 Volt Blocking Capability ● 50 W at 25°C Case Temperature

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CONFIGURATIONS

DESCRIPTION The VN770 is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two Power MOSFETs. The double high side are made using STMicroelectronics VIPower technology; Power MOSFETs are made by using the new advanced strip lay-out technology. Th