Photologic Reflective Object Sensors

Description The OPB770T series of reflective assemblies feature Photologic® output. This electrical output can be specified as either TTL Totem Pole or TTL Open Collector. Either may be supplied with inverter or buffer output polarity. All have the added stability of a built-in hysteresis amplifi

Photologic Reflective Object Sensors

Description The OPB760N series of reflective assemblies feature Photologic® output. This electrical output can be specified as either TTL Totem Pole or TTL Open Collector. Either may be supplied with inverter or buffer output polarity. All have the added stability of a built-in hysteresis ampli

Photologic Reflective Object Sensor

Description: The OPB760N, OPB760T, OPB770N and OPB770T series of reflecƟve assemblies feature Photologic® output. The electrical output can be specified as either TTL Totem-Pole or TTL Open-Collector, either of which can be supplied with inverter or buffer output polarity. OPB760N and OPB760T se

Photologic® Reflective Object Sensor

Description: The OPB760N, OPB760T and OPB770T series of reflective assemblies feature Photologic® output. The electrical output can be specified as either TTL Totem-Pole or TTL Open-Collector, either of which can be supplied with inverter or buffer output polarity. Features: • Choice of mountin

包装：散装 描述：SENSOR REFLCTV 5.58MM TOTEM POLE 传感器，变送器 光学传感器 - 光电，工业

Reflective Sensor, Focused

Photologic Reflective Object Sensors

文件：264.63 Kbytes Page：4 Pages

Photologic Reflective Object Sensors

文件：264.63 Kbytes Page：4 Pages

HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50-1000 VOLTS DIFFUSED JUNCTION

HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50–1000 VOLTS DIFFUSED JUNCTION • Current Capacity Comparable to Chassis Mounted Rectifiers • Very High Surge Capacity • Insulated Case Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 2.5 grams (approximately) • Finish: All External S

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability ● 75 W at 25°C Case Temperature

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability ● 75 W at 25°C Case Temperature

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1200 Volt Blocking Capability ● 75 W at 25°C Case Temperature

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1200 Volt Blocking Capability ● 75 W at 25°C Case Temperature