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TIPL760晶体管资料

  • TIPL760别名:TIPL760三极管、TIPL760晶体管、TIPL760晶体三极管

  • TIPL760生产厂家

  • TIPL760制作材料:Si-NPN

  • TIPL760性质

  • TIPL760封装形式:直插封装

  • TIPL760极限工作电压:375V

  • TIPL760最大电流允许值:4A

  • TIPL760最大工作频率:<1MHZ或未知

  • TIPL760引脚数:3

  • TIPL760最大耗散功率:80W

  • TIPL760放大倍数

  • TIPL760图片代号:B-71

  • TIPL760vtest:375

  • TIPL760htest:999900

  • TIPL760atest:4

  • TIPL760wtest:80

  • TIPL760代换 TIPL760用什么型号代替:3DK308A,

型号 功能描述 生产厂家 企业 LOGO 操作
TIPL760

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability ● 75 W at 25°C Case Temperature

POINN

TIPL760

isc Silicon NPN Darlington Power Transistor

FEATURES ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Rugged Triple-duffused planar construction

ISC

无锡固电

TIPL760

NPN SILICON POWER TRANSISTORS

POINN

TIPL760

Trans GP BJT NPN 400V 4A 3-Pin(3+Tab) TO-220

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability ● 75 W at 25°C Case Temperature

POINN

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1200 Volt Blocking Capability ● 75 W at 25°C Case Temperature

POINN

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1200 Volt Blocking Capability ● 75 W at 25°C Case Temperature

POINN

isc Silicon NPN Power Transistor

DESCRIPTION • Rugged Triple-duffused planar construction FEATURES • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 550V(Min.) • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

NPN SILICON POWER TRANSISTORS

文件:187.54 Kbytes Page:5 Pages

BOURNS

伯恩斯

NPN SILICON POWER TRANSISTORS

POINN

NPN SILICON POWER TRANSISTORS

文件:140.35 Kbytes Page:5 Pages

BOURNS

伯恩斯

NPN SILICON POWER TRANSISTORS

文件:140.35 Kbytes Page:5 Pages

BOURNS

伯恩斯

封装/外壳:TO-220-3 包装:卷带(TR) 描述:TRANS NPN DARL 550V 4A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

封装/外壳:TO-220-3 包装:管件 描述:TRANS NPN 400V 4A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50-1000 VOLTS DIFFUSED JUNCTION

HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50–1000 VOLTS DIFFUSED JUNCTION • Current Capacity Comparable to Chassis Mounted Rectifiers • Very High Surge Capacity • Insulated Case Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 2.5 grams (approximately) • Finish: All External S

MOTOROLA

摩托罗拉

TIPL760产品属性

  • 类型

    描述

  • Configuration:

    Single

  • Material:

    Si

  • Maximum Collector Base Voltage:

    850V

  • Maximum Collector Emitter Saturation Voltage:

    1@0.5A@2.5A2.5@0.8A@4A

  • Maximum Collector Emitter Voltage:

    400V

  • Maximum DC Collector Current:

    4A

  • Maximum Emitter Base Voltage:

    10V

  • Maximum Operating Temperature:

    150°C

  • Maximum Power Dissipation:

    75000mW

  • Maximum Transition Frequency:

    12(Typ)MHz

  • Type:

    NPN

更新时间:2026-5-13 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Bourns Inc.
25+
SOT-93
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
Bourns Inc.
25+
TO-220
18746
样件支持,可原厂排单订货!
BOURNS
TO-220
50000
BOURNSINC
23+
TO-TO-220
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
24+
TO220
3000
ST/意法
24+
65230
BRNS
22+
TO220
20000
只做原装 品质保障
BOURNSINC
22+
TO-220
6000
十年配单,只做原装
BOURNS/伯恩斯
25+
TO-220
90000
全新原装现货
BRNS
23+
TO220
3879
全新原装正品现货,支持订货

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