丝印代码：OPA454；OPA454 High-Voltage (100-V), High-Current (50-mA) Operational Amplifiers, G = 1 Stable

1 Features 1• Wide Power-Supply Range: ±5 V (10 V) to ±50 V (100 V) • High-Output Load Drive: IO > ±50 mA • Wide Output Voltage Swing: 1 V to Rails • Independent Output Disable or Shutdown • Wide Temperature Range: –40°C to +85°C • 8-Pin SO Package 2 Applications • Test Equipment • Ava

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 80 Watts Minimum Gain = 12 dB Efficiency = 50

P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

SURFACE MOUNT SILICON ZENER DIODES

VZ : 2.7 - 200 Volts PD : 2 Watts FEATURES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt