丝印代码：RAZ；OPAx314 3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

1 Features 1• Low IQ: 150 μA/ch • Wide Supply Range: 1.8 V to 5.5 V • Low Noise: 14 nV/√Hz at 1 kHz • Gain Bandwidth: 3 MHz • Low Input Bias Current: 0.2 pA • Low Offset Voltage: 0.5 mV • Unity-Gain Stable • Internal RF/EMI Filter • Extended Temperature Range: –40°C to 125°C 2 Applica

3-MHz, Low-Power, Low-Noise, RRI/O, 1.8-V CMOS OPERATIONAL AMPLIFIER

文件：1.4007 Mbytes Page：31 Pages

3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

文件：1.783 Mbytes Page：36 Pages

Operational Amplifier

文件：2.03409 Mbytes Page：45 Pages

丝印代码：RAZ；OPAx314 3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

1 Features 1• Low IQ: 150 μA/ch • Wide Supply Range: 1.8 V to 5.5 V • Low Noise: 14 nV/√Hz at 1 kHz • Gain Bandwidth: 3 MHz • Low Input Bias Current: 0.2 pA • Low Offset Voltage: 0.5 mV • Unity-Gain Stable • Internal RF/EMI Filter • Extended Temperature Range: –40°C to 125°C 2 Applica

丝印代码：RAZ；OPAx314 3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

1 Features 1• Low IQ: 150 μA/ch • Wide Supply Range: 1.8 V to 5.5 V • Low Noise: 14 nV/√Hz at 1 kHz • Gain Bandwidth: 3 MHz • Low Input Bias Current: 0.2 pA • Low Offset Voltage: 0.5 mV • Unity-Gain Stable • Internal RF/EMI Filter • Extended Temperature Range: –40°C to 125°C 2 Applica

Low-voltage stabistor

DESCRIPTION Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. FEATURES • Low-voltage stabilization • Forward voltage range: 610 mV to 940 mV • Total power dissipation: max. 400 mW. APPLICATIONS • Low-voltage stabilization e.g. – Bias

丝印代码：H04；Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

丝印代码：H04；Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts Minimum Gain = 10 dB • 100 Tested for Load Mismatch