丝印代码：OPA140；OPAx140 High-Precision, Low-Noise, Rail-to-Rail Output, 11-MHz, JFET Op Amps

1 Features • Very-low offset drift: 1 μV/°C maximum • Very-low offset: 120 μV • Low input bias current: 10 pA maximum • Very-low 1/f noise: 250 nVPP, 0.1 Hz to 10 Hz • Low noise: 5.1 nV/√Hz • Slew rate: 20 V/μs • Low supply current: 2 mA maximum • Input voltage range includes V– supply •

丝印代码：OPA140；OPAx140 High-Precision, Low-Noise, Rail-to-Rail Output, 11-MHz, JFET Op Amps

1 Features • Very-low offset drift: 1 μV/°C maximum • Very-low offset: 120 μV • Low input bias current: 10 pA maximum • Very-low 1/f noise: 250 nVPP, 0.1 Hz to 10 Hz • Low noise: 5.1 nV/√Hz • Slew rate: 20 V/μs • Low supply current: 2 mA maximum • Input voltage range includes V– supply •

High-Precision, Low-Noise, Rail-to-Rail Output 11MHz JFET Op Amp

文件：807.26 Kbytes Page：25 Pages

11-MHz JFET Op Amp

文件：1.75261 Mbytes Page：44 Pages

丝印代码：OPA140；OPAx140 High-Precision, Low-Noise, Rail-to-Rail Output, 11-MHz, JFET Op Amp

文件：2.85372 Mbytes Page：48 Pages

丝印代码：OPA140；OPAx140 High-Precision, Low-Noise, Rail-to-Rail Output, 11-MHz, JFET Op Amps

1 Features • Very-low offset drift: 1 μV/°C maximum • Very-low offset: 120 μV • Low input bias current: 10 pA maximum • Very-low 1/f noise: 250 nVPP, 0.1 Hz to 10 Hz • Low noise: 5.1 nV/√Hz • Slew rate: 20 V/μs • Low supply current: 2 mA maximum • Input voltage range includes V– supply •

丝印代码：OPA140；OPAx140 High-Precision, Low-Noise, Rail-to-Rail Output, 11-MHz, JFET Op Amps

1 Features • Very-low offset drift: 1 μV/°C maximum • Very-low offset: 120 μV • Low input bias current: 10 pA maximum • Very-low 1/f noise: 250 nVPP, 0.1 Hz to 10 Hz • Low noise: 5.1 nV/√Hz • Slew rate: 20 V/μs • Low supply current: 2 mA maximum • Input voltage range includes V– supply •

丝印代码：OPA140；OPAx140 High-Precision, Low-Noise, Rail-to-Rail Output, 11-MHz, JFET Op Amps

1 Features • Very-low offset drift: 1 μV/°C maximum • Very-low offset: 120 μV • Low input bias current: 10 pA maximum • Very-low 1/f noise: 250 nVPP, 0.1 Hz to 10 Hz • Low noise: 5.1 nV/√Hz • Slew rate: 20 V/μs • Low supply current: 2 mA maximum • Input voltage range includes V– supply •

Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

POWER TRANSISTORS(10A,60-100V,125W)

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP