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型号 功能描述 生产厂家 企业 LOGO 操作
OP803TX

Hi-Reliability NPN Sil icon Phototransistor

OPTEK

OP803TX

High Reliability NPN Silicon Phototransistor

文件:180.54 Kbytes Page:2 Pages

TTELEC

OP803TX

封装/外壳:TO-206AA,TO-18-3 金属罐 包装:散装 描述:SENSOR PHOTO 890NM TOP TO206AA 传感器,变送器 光学传感器 - 光电晶体管

BIMAGNETICS

Hi-Reliability NPN Sil icon Phototransistor

OPTEK

High Reliability NPN Silicon Phototransistor

文件:180.54 Kbytes Page:2 Pages

TTELEC

封装/外壳:TO-206AA,TO-18-3 金属罐 包装:散装 描述:SENSOR PHOTO 890NM TOP TO206AA 传感器,变送器 光学传感器 - 光电晶体管

BIMAGNETICS

2 W, 806 to 905 MHz UHF POWER AMPLIFIERS

The RF Line UHF Power Amplifiers Capable of wide power range control as encountered in portable cellular radio applications (30 dB typical). • MHW803–2 806–870 MHz • Specified 7.5 Volt Characteristics RF Input Power = 1 mW (0 dBm) RF Output Power = 2 Watts Minimum Gain (VControl

MOTOROLA

摩托罗拉

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

ONSEMI

安森美半导体

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

MOSPEC

统懋

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors

NEC

瑞萨

OP803TX产品属性

  • 类型

    描述

  • 型号

    OP803TX

  • 功能描述

    光电晶体管 TO-18, NPN silicon Photo transistor

  • RoHS

  • 制造商

    OSRAM Opto Semiconductors

  • 最大功率耗散

    165 mW

  • 最大暗电流

    200 nA

  • 封装/箱体

    T-1

更新时间:2026-8-1 15:13:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
OPTEK
20+
标准
88720
红外全新原装主营-可开原型号增税票
OPTEK
23+
50000
原厂授权一级代理,专业海外优势订货,价格优势、品种
Optek (TT Electronics)
2022+
1
全新原装 货期两周

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