NPN PLASTIC SILICON PHOTOTRANSISTORS

Description The OP593/598 series consists of an NPN silicon phototransistor molded in a dark blue epoxy package. The wide receiving angle provides relatively even reception over a large area. These devices are 100 production tested using infrared light for close correlation with Opteks GaAs and G

NPN Plastic Silicon Photortansistors Types OP593, OP598 Series

Description The OP593/598 series consists of an NPN silicon phototransistor molded in a dark blue epoxy package. The wide receiving angle provides relatively even reception over a large area. These devices are 100 production tested using infrared light for close correlation with Opteks GaAs and G

NPN Plastic Silicon Phototransistor

Description: Each device in this series consists of an NPN silicon phototransistor molded in a dark blue epoxy packages. The wide receiving angle (130°) of the OP593 and OP793 series devices provides relaƟvely even recepƟon over a large area. The narrow receiving angle (25°) of the OP598 and OP79

NPN plastic silicon phototransistor

•Dark blue epoxy package\n• Wide receiving angle\n• Variety of sensitivity ranges\n• TO-18 equivalent package style;

NPN Plastic Silicon Phototransistor

Description: Each device in this series consists of an NPN silicon phototransistor molded in a dark blue epoxy packages. The wide receiving angle (130°) of the OP593 and OP793 series devices provides relaƟvely even recepƟon over a large area. The narrow receiving angle (25°) of the OP598 and OP79

NPN Plastic Silicon Photortansistors Types OP593, OP598 Series

Description The OP593/598 series consists of an NPN silicon phototransistor molded in a dark blue epoxy package. The wide receiving angle provides relatively even reception over a large area. These devices are 100 production tested using infrared light for close correlation with Opteks GaAs and G

NPN Plastic Silicon Phototransistor

Description: Each device in this series consists of an NPN silicon phototransistor molded in a dark blue epoxy packages. The wide receiving angle (130°) of the OP593 and OP793 series devices provides relaƟvely even recepƟon over a large area. The narrow receiving angle (25°) of the OP598 and OP79

NPN Plastic Silicon Phototransistor

Description: Each device in this series consists of an NPN silicon phototransistor molded in a dark blue epoxy packages. The wide receiving angle (130°) of the OP593 and OP793 series devices provides relaƟvely even recepƟon over a large area. The narrow receiving angle (25°) of the OP598 and OP79

Phototransistor

封装/外壳：径向 包装：散装 描述：SENSOR PHOTO 890NM TOP VIEW RAD 传感器，变送器 光学传感器 - 光电晶体管

Phototransistor

封装/外壳：TO-18-2 包装：散装 描述：SENSOR PHOTO 890NM TOP VIEW TO18 传感器，变送器 光学传感器 - 光电晶体管

NPN high-voltage transistors

DESCRIPTION NPN high-voltage transistor in a TO-202; SOT128B plastic package. FEATURES • Low current (max. 150 mA) • High voltage (max. 210 V). APPLICATIONS • Telephone systems.

PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

SOT89 Silicon planar high voltage transistor Complementary part number - FMMT493 Device marking - P93

Silicon Diode, High Speed Switch

Description: The NTE593 is a silicon epitaxial high–speed diode in an SOT–23 type surface mount package. This device is intended for high–speed switching in hybrid thick–film circuits.

MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications

MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications