Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

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封装/外壳：T 1 3/4 包装：散装 描述：EMITTER IR 890NM 150MA T 1 3/4 光电器件 LED 发射器 - 红外，紫外，可见光

Infrared LED

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

DUAL/QUAD RAIL-TO-RAIL OPERATIONAL AMPLIFIERS

GENERAL DESCRIPTION The AD8546 and AD8548 are dual and quad micropower, high input impedance amplifiers optimized for low power and wide operating supply voltage range applications. The AD8546/AD8548 rail-to-rail input/output (RRIO) feature provides increased dynamic range to drive low frequ

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

SIPMOS® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8 2.0V

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

SIPMOS® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8 2.0V

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DESCRIPTION The L295 is a monolithic integrated circuit in a 15 - lead Multiwatt ® package; it incorporates all the functions for direct interfacing between digital circuitry and inductive loads. The L295 is designed to accept standard microprocessor logic levels at the inputs and can drive 2 sol

Silicon NPN Transistor RF Power Output, Driver

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Collector–Emitter Voltage (RBE = 150Ω), VCER . . . . . . . . . . . . . . . . .