GaAIAs Plastic Infrared Emitting Diodes

Description: Each diode in this series is molded into an end-looking plastic package. The package for all OP168F and OP268F devices is black, whereas the package for all OP169 and OP269 packages is clear. OP168F and OP169 devices are GaAs. OP268F and OP269 devices are GaAIAs. The OP268FPS is an

Plastic Infrared Emitting Diode

Description: Each diode in this series is molded into an end-looking plastic package. The package for all OP168F and OP268F devices is black, whereas the package for all OP169 and OP269 packages is clear. OP168F and OP169 devices are GaAs. OP268F and OP269 devices are GaAIAs. The OP268FPS is an

Plastic Infrared Emitting Diode

Features: • Flat lens for wide radiation angle (OP168, OP268) • Integral lens for narrow beam angle (OP269) • Easily stackable on 0.100” (2.54 mm) hole centers • Mechanically and spectrally matched to other OPTEK devices Description: Each diode in this series is molded into an end-looking pl

封装/外壳：径向 包装：散装 描述：EMITTER IR 890NM 50MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

Infrared LED

Plastic Infrared Emitting Diode

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Plastic Infrared Emitting Diode

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Silicon Mesa Rectifiers

FEATURES • Glass passivated junction • Hermetically sealed package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High voltage fast rectification diode

LC SOT-23 LED, Diffused Low Current LED

Features ● colored, diffused package ● extrem wide-angle LED ● for use as optical indicator ● high luminous intensity at very low currents (typ. 2 mA) ● suitable for all SMT assembly and soldering methods ● available taped on reel (8 mm tape)

LC SOT-23 LED, Diffused Low Current LED

Features ● colored, diffused package ● extrem wide-angle LED ● for use as optical indicator ● high luminous intensity at very low currents (typ. 2 mA) ● suitable for all SMT assembly and soldering methods ● available taped on reel (8 mm tape)

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential require ment, low power lamp and relay drivers and power drivers for high–current applications s

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE