Infrared LED

•T-1 (3 mm) package style\n• Broad irradiance pattern\n• Point source with flat lens\n• Higher power output than GaAs at equivalent drive currents\n• 850 nm diode;

Plastic Infrared Emitting Diode

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Plastic Infrared Emitting Diode

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封装/外壳：T-1 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：EMITTER IR 850NM 50MA T-1 光电器件 LED 发射器 - 红外，紫外，可见光

GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays

Features ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● High reliability ● Same package as BPX 80 series Applications ● Miniature photointerrupters ● Punched tape-readers ● Industrial electronics ● For control and drive circuits

Silicon NPN Transistor Darlington Power Amplifier

Features: • Forward Current Transfer Ratio: hFE = 10,000 Min • Power Dissipation: 1.33W Free–Air @ TA = +50°C • Hard Solder Mountdown Applications: • Driver, IC Driver • Regulator • Touch Switch • Audio Output • Relay Substitute • Oscillator • Servo–Amplifier

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

Square Type

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Micropower Programmable Quad Comparator

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