High Reliability Hermetic Infrared Emitting Diode

DescripƟon: Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emiƫng diode, mounted in a hermeƟc metal TO‐ 46 housing. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current. Each OP231, OP232, OP233, OP

High Reliability Hermetic Infrared Emitting Diode

Features: • TO-46 hermetically sealed package with lens • Twice the power output of GaAs at same drive current • Characterized to define infrared energy along mechanical axis of device • Narrow beam angle • Processed to MIL-PRF-19500 Description: Each device in this series is a gallium al

Infrared LED

•TO-46 hermetically sealed package with lens\n• Twice the power output of GaAs at same drive current\n• Characterized to define infrared energy along mechanical axis of device\n• Narrow beam angle\n• Processed to MIL-PRF-19500;

封装/外壳：TO-46-2 透镜顶部金属罐 包装：散装 描述：EMITTER IR 890NM 100MA TO-46 光电器件 LED 发射器 - 红外，紫外，可见光

Hi- Reliability GaAlAs Infrared Emitting Diodes

文件：225.15 Kbytes Page：2 Pages

High Reliability Hermetic Infrared Emitting Diode

文件：119.28 Kbytes Page：3 Pages

High Reliability Hermetic Infrared Emitting Diode

DescripƟon: Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emiƫng diode, mounted in a hermeƟc metal TO‐ 46 housing. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current. Each OP231, OP232, OP233, OP

High Reliability Hermetic Infrared Emitting Diode

文件：119.28 Kbytes Page：3 Pages

High Reliability Hermetic Infrared Emitting Diode

文件：119.28 Kbytes Page：3 Pages

Hi- Reliability GaAlAs Infrared Emitting Diodes

文件：225.15 Kbytes Page：2 Pages

封装/外壳：TO-46-2 透镜顶部金属罐 包装：散装 描述：EMITTER IR 890NM 100MA TO-46 光电器件 LED 发射器 - 红外，紫外，可见光

NPN video transistor

DESCRIPTION NPN video transistor in a SOT128B (TO-202) plastic package. PNP complement: BFQ255A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • CRT amplifier buf

NPN video transistor

DESCRIPTION NPN video transistor in a SOT128B (TO-202) plastic package. PNP complement: BFQ255A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • CRT amplifier buf

Silicon NPN Transistor Final RF Power Output

Description: The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.

Precision Temperature Sensors

文件：291.37 Kbytes Page：14 Pages

Precision Temperature Sensors

文件：291.37 Kbytes Page：14 Pages