DescripƟon:

Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emiƫng diode, mounted in a hermeƟc metal TO‐ 46 housing. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current.

Each OP231, OP232, OP233, OP234 and OP235 device is lensed to provide a narrow beam angle (18°) between half power points. The 890 nm wavelength closely matches the spectral response of silicon phototransistors, while the narrow beam angle – combined with the specified radiant intensity of the OP231 series – facilitates easy design in beam interrupt applicaƟons in conjuncƟon with the OP800 or OP598 series photosensors. The OP231 series is mechanically and spectrally matched to OP800, OP593 and OP598 phototransistors.

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Features:

• Focused and non‐focused opƟcal light paƩern

• Enhanced temperature range

• TO‐46 hermeƟcally sealed package

• Mechanically and spectrally matched to other Optek devices

• Choice of power ranges

• Choice of narrow or wide irradiance paƩern

ApplicaƟons:

• Non‐contact reflecƟve object sensor

• Assembly line automaƟon

• Machine automaƟon

• Machine safety

• End of travel sensor

• Door sensor