GaAs Plastic Infrared Emitting Diodes

Description: Each diode in this series is molded into an end-looking plastic package. The package for all OP168F and OP268F devices is black, whereas the package for all OP169 and OP269 packages is clear. OP168F and OP169 devices are GaAs. OP268F and OP269 devices are GaAIAs. The OP268FPS is an

Plastic Infrared Emitting Diode

Description: Each diode in this series is molded into an end-looking plastic package. The package for all OP168F and OP268F devices is black, whereas the package for all OP169 and OP269 packages is clear. OP168F and OP169 devices are GaAs. OP268F and OP269 devices are GaAIAs. The OP268FPS is an

Plastic Infrared Emitting Diode

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Plastic Infrared Emitting Diode

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封装/外壳：径向 包装：散装 描述：EMITTER IR 935NM 50MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 20 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 165, 169

Thyristor logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. This device is intended to be interfaced directly to microcontrollers, logic integrated circuits and

Single Phase Bridge Rectifier 2.0 Amp

Features: • Ideal for Printed Circuit Board • Surge Overload Rating: 50A (Peak)

Precision Voltage Reference

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Precision Voltage Reference

文件：262.98 Kbytes Page：14 Pages