GaAs Hermetic Infrared Emitting Diodes

Description: Each OP130 series device is a 935 nm gallium arsenide (GaAs) infrared LED mounted in a hermetically sealed TO -46 package that provides an enhanced temperature range with a variety of power ranges The TO-46 housing also offers high power dissipation and superior protection for hostil

Hermetic Infrared Diode

Description: Each OP130 series device is a 935 nm gallium arsenide (GaAs) infrared LED mounted in a hermetically sealed TO-46 package that provides an enhanced temperature range with a variety of power ranges The TO-46 housing also offers high power dissipation and superior protection for hostile

Hermetic Infrared Emitting Diode

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封装/外壳：TO-46-2，金属罐 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：EMITTER IR 935NM 100MA TO-46 光电器件 LED 发射器 - 红外，紫外，可见光

Hermetic Infrared Emitting Diode

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L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

3-Ampere Adjustable Negative Regulators

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3-Ampere Adjustable Negative Regulators

文件：268.49 Kbytes Page：10 Pages