11.3 Gbps Limiting Transimpedance Amplifier With RSSI

1FEATURES • 10 GHz Bandwidth • 7 kΩ Differential Small Signal Transimpedance • 2.5 mAPP Input Overload Current • Received Signal Strength Indication (RSSI) • 100mW Typical Power Dissipation • CML Data Outputs With On-Chip 50Ω Back-Termination • On Chip Supply Filter Capacitor • Single 3.3

11.3 Gbps Limiting Transimpedance Amplifier With RSSI

文件：396.76 Kbytes Page：15 Pages

11.3 Gbps Limiting Transimpedance Amplifier With RSSI

1FEATURES • 10 GHz Bandwidth • 7 kΩ Differential Small Signal Transimpedance • 2.5 mAPP Input Overload Current • Received Signal Strength Indication (RSSI) • 100mW Typical Power Dissipation • CML Data Outputs With On-Chip 50Ω Back-Termination • On Chip Supply Filter Capacitor • Single 3.3

11.3 Gbps Limiting Transimpedance Amplifier With RSSI

1FEATURES • 10 GHz Bandwidth • 7 kΩ Differential Small Signal Transimpedance • 2.5 mAPP Input Overload Current • Received Signal Strength Indication (RSSI) • 100mW Typical Power Dissipation • CML Data Outputs With On-Chip 50Ω Back-Termination • On Chip Supply Filter Capacitor • Single 3.3

11.3 Gbps Limiting Transimpedance Amplifier With RSSI

1FEATURES • 10 GHz Bandwidth • 7 kΩ Differential Small Signal Transimpedance • 2.5 mAPP Input Overload Current • Received Signal Strength Indication (RSSI) • 100mW Typical Power Dissipation • CML Data Outputs With On-Chip 50Ω Back-Termination • On Chip Supply Filter Capacitor • Single 3.3

11.3 Gbps Limiting Transimpedance Amplifier With RSSI

文件：396.76 Kbytes Page：15 Pages

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over wide temperature range of 0 to +65 °C. It is designed

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over wide temperature range of 0 to +65 °C. It is designed

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over wide temperature range of 0 to +65 °C. It is designed

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over wide temperature range of 0 to +65 °C. It is designed

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over wide temperature range of 0 to +65 °C. It is designed