封装/外壳：TO-263-5，D²Pak（4 引线 + 接片），TO-263BB 包装：管件 描述：MOSFET RF SOT426 D2PAK 分立半导体产品 晶体管 - FET，MOSFET - 射频

MOSFET RF SOT426 D2PAK

Q-Band 2-Stage Power Amplifier

DESCRIPTION The MGFC5214 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band High Power Amplifier (HPA) . FEATURES ● RF frequency : 37.0 to 43.0 GHz ● Linear gain : 12 dB (TYP.)@ 37 to 40 GHz 10 dB(TYP.) @ 40 to 43 GHz ● P1dB : ≥ 23 dBm(min.) @ 37 to 40 GHz ≥ 23 dBm(target) @ 40

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital

Postamplifier with link status indicator

DESCRIPTION The SA5214 is a 75MHz postamplifier system designed to accept low level high-speed signals. These signals are converted into a TTL level at the output. The SA5214 can be DC coupled with the previous transimpedance stage using SA5210, SA5211 or SA5212 transimpedance amplifiers. FEATUR

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type ​​​​​​​ For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing

80mA, Low Dropout Voltage Regulator with Auto Discharge Function in SC70

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